| 1. | Effects of germanium on oxygen precipitation in heavily boron - doped czochralski silicon
锗对重掺硼直拉硅中氧沉淀的影响 |
| 2. | Oxygen precipitation characterization of silicon wafers by measurement of interstitial oxygen reduction
硅片氧沉淀特性的测定-间隙氧含量减少法 |
| 3. | Test methods for oxygen precipitation characterization of silicon wafers by measurement of interstitial oxygen reduction
通过测量间隙氧含量的减少表征硅片氧沉淀特性的方法 |
| 4. | Finally , the effect of rapid thermal process ( rtp ) on oxygen precipitation in hb is investigated in this paper
最后文章还系统研究了快速热处理( rtp )对重掺硼硅单晶中氧沉淀的影响。 |
| 5. | Fumio shimura , et al . carbon enhancement effect on oxygen precipitation in czochralski silicon [ j ] . j appl phys , 1986 , 59 : 3251
刘培东,朱爱平,张锦心等.碳和氮原子在氧沉淀中的作用[ j ] .半导体学报, 1999 , 20 : 107 |
| 6. | The experimental results showed that high density of oxygen precipitation and induced - defects were formed after annealing of wafers at moderate and high temperatures
重掺砷硅单晶在中高温退火时形成密度较高的氧沉淀及诱生缺陷。 |
| 7. | The nucleation temperature of oxygen precipitation is about 750 c in lightly doped czsi , while the nucleation in heavily as - doped si occurred at a higher temperature ( 750 - 900 c )
普通直拉硅氧沉淀在低温750形核，重掺as硅单晶形核温度较高，在750 - 900之间。 |
| 8. | Both the size and density of oxygen precipitation increase with the annealing time , and the size of oxygen precipitation decrease with the increase of the annealing temperature
随着退火时间的延长氧沉淀尺寸增大，密度略有增加；随着退火温度的升高，氧沉淀尺寸相对减小。 |
| 9. | A modified ig process was suggested , through which a wider denuded - zone ( dz ) on the surface of wafers and higher density of oxygen precipitation in silicon bulk were obtained
使用改进的内吸除工艺，在重掺砷硅片表面形成了较宽的清洁区，体内形成了较高密度的氧沉淀和诱生缺陷。 |
| 10. | Tem showed that the faults and dislocation loops introduced by the oxygen precipitation were formed when the wafers were annealed at moderate temperature , and polyhedral oxygen precipitation was generated at high temperature
对氧沉淀形态及诱生缺陷进行了tem测试分析，结果表明，在中温退火时出现氧沉淀引起的层错和位错环；在高温退火后生成了多面体形状的氧沉淀。 |
